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| TOSHIBA Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 GT10J321 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast Switching(FS) :Operating frequency up to 150kHz(Reference) :tf=0.03s(typ.) High speed Low switching loss :Eon=0.26mJ(typ.) :Eoff=0.18mJ(typ.) Low saturation voltage :VCE(sat)=2.0V(typ.) FRD included between emitter and collector Maximum Ratings (Ta=25) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc=25) Junction temperature Storage temperature range DC 1ms DC 1ms Symbol Ratings Unit VCES VGES IC ICP IF IFM PC Tj Tstg 600 20 10 20 10 20 29 150 -55150 V V A A W 2001-6- 1/6 TOSHIBA Preliminary Electrical Characteristics(Ta=25) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation volatage Input capacitance Turn-on delay time Rise Time Switching time Turn-on Time Turn-off delay time Fall Time Turn-off Time Switching loss Turn-on switching loss Turn-off switching loss Symbol Test Condition Min GT10J321 Typ. Max 500 Unit IGES ICES VGE(OFF) VCE(sat) Cies td(on) tr ton td(off) tf toff Eon Eoff VF trr Rth(j-c) Rth(j-c) VGE=20V,VCE=0 VCE=600V,VGE=0 IC=1mA,VCE=5V IC=10A,VGE=15V VCE=10V,VGE=0,f=1MHz Inductive Load VCC=300V,IC=10A VGG=+15V,RG=68 (Note 1) (Note 2) 3.5 - 2.0 1500 0.06 0.03 0.17 0.24 0.03 0.30 0.26 0.18 - 1.0 6.5 2.45 0.15 2.0 200 nA mA V V pF s mJ V ns Peak forward voltage Reverse recovery time Thermal resistance(IGBT) Thermal resistance(Diode) IF=10A,VGE=0 IF=10A,di/dt=-100A/s 4.31 /W 4.90 /W 2001-6- 2/6 TOSHIBA GT10J321 Reference IC - VCE VCE - VGE 20 20 Collector-emitter voltageVCE (V) Common emitter Tc = 25 Common emitte Tc = 25 15 10 20 16 Collector currentIC (A) 16 12 12 20 9 8 8 10 4 4 IC = 5A VGE = 8V 0 0 1 2 3 4 Collector-emitter voltageV CE (V) 5 0 0 4 8 12 16 Gate-emitter voltageVGE (V) VCE - VGE 20 Collector-emitter voltageVCE (V) Common emitter Tc = -40 Common emitter Tc = 125 20 20 Collector-emitter voltageVCE (V) VCE - VGE 16 16 12 12 20 10 IC = 5A 20 8 8 10 4 4 IC = 5A 0 0 4 8 12 16 Gate-emitter voltageV GE (V) 20 0 0 4 8 12 16 Gate-emitter voltageV GE (V) 20 IC - VGE Common emitter VCE = 5V Collector-emitter saturation voltageVCE(sat) (V) 20 4 VCE(sat) - Tc Common emitter VGE = 15V 20 15 10 16 Collector currentIC (A) 3 12 2 5 IC = 2A 8 125 Tc = 25 -40 4 1 0 0 4 8 12 16 Gate-emitter voltageVGE (V) 20 0 -60 -20 20 60 100 Case temperatureTc () 140 2001-6- 3/6 TOSHIBA GT10J321 Reference 10 Switching timeton , tr, td(on)(s) Switching time ton , ,trr,,td(on) -- RG Switching time on t t d(on) R G Switching timeton, tr, td(on)(s) Common emitter VCC =300V VGG =15V IC =10A Tc=25 Tc=125 Note1 10 Switching time ton,tr,r,td(on) --CIC Switching time on, t t d(on) I Common emitter VCC =300V Tc=25 VGG =15V Tc=125 RG =68 Note 1 1 0.1 ton td(on) tr 0.1 ton td(on) tr 0.01 1 10 100 Gate resistanceR G() 1000 0.01 0 2 4 6 Collector currentIC(A) 8 10 10 Switching timetoff, tf td(off)(s) Switching time off, f ,td(off) Switching timettofft,t, ftd(off) - RGRG Common emitter VCC =300V VGG =15V IC =10A Tc=25 Tc=125 Note1 10 Switching timetoff, tf, td(off)(s) Switching time tofft,t, ftd(off) - - IC Switc i h off, f ,td(off) IC Common emitter VCC=300V Tc=25 VCC Tc=25 VGG VGG =15V Tc=125 Tc=125 RG R G =68 Note Note 1 1 toff td(off) 0.1 toff 0.1 td(off) tf tf 0.01 0.01 1 10 100 Gate resistanceRG() Switching lossEon, Eoff - RG 1000 0 2 4 6 Collector currentIC(A) 8 10 1 Switching lossEon , Eoff(mJ) 1 Switching lossEon, Eoff - IC Eon 0.1 Switching lossEon , Eoff(mJ) Eon Eoff 0.1 0.01 1 Common emitter VCC =300V VGG =15V IC =10A Tc=25 Tc=125 Note2 Eoff 0.01 0 2 Common emitter VCC =300V VGG =15V RG =68 Tc=25 Tc=125 Note2 10 100 Gate rtesistanceR G() 1000 4 6 8 Collector currentI C(A) 10 2001-6- 4/6 TOSHIBA GT10J321 Reference C-VCE 10000 500 VCE, VGE - QG Common emitter RL =30 Tc=25 20 400 16 1000 300 VCE=300V 12 200 8 100 Common emitter VGE =0 f=1MHz Tc=25 Coes 200 100 100 4 Cres 1000 10 0.1 1 10 100 Collector-emitter voltage VCE (V) 0 0 20 40 60 Gate chrageQG(nC) 80 0 20 Common collector VGE=0 IF-VF 100 Reverse recovery currentIrr(A) Common collector di/dt=-100A/s VGE =0 Tc=25 Tc=125 trr, Irr - IF 1000 16 Forward currentIF (A) 12 125 -40 trr 10 100 Irr 8 4 Tc=25 0 0 0.4 0.8 1.2 Forward voltageVF (V) 1.6 2 1 0 2 4 6 8 10 10 Forward currentIF(A) Reverse bias SOA 100 Safe operat i Safe operating area 100 Ic max (pulsed)* Collector current IC (A) Ic max (continuous) 5 0 s* 10 100s * Collector current IC (A) 10 DC operation 1 ms* 1 Single nonrepetitive pulse Tc=25 Curves must be dilated linearly with increase in temperature. * 1 0 ms* 1 Tj125 VGE=15V RG =68 0.1 1 10 100 Collector-emitter voltage VCE (V) 1000 0.1 1 10 100 Collector-emitter voltage VCE (V) 1000 2001-6- 5/6 Reverse recovery timetrr(ns) Gate-emitter voltageVGE(V) Cies CapacitanceC (pF) Collector-emitter voltageVCE(V) TOSHIBA GT10J321 Reference 102 Transient thermal resistancerth(t) (/W) 10 10 1 rth(t) - tw FRD 0 10-1 10 -2 IGBT 10-3 10-4 -5 10 TC = 25 10 -4 10 -3 10 10 10 Puls e Pulse width tW (s) w (s) -2 -1 0 10 1 10 2 2001-6- 6/6 |
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